Paper List| List of Prof.Iwai's Thesis | |
| List of Thesis Title(1976-2007)(PDF) |
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| Representative Thesis |
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- List of Doctoral/Master/Graduation Thesis
| Thesis of Earned Doctorate in 2010 | |
| Jaeyeol Song | A Study on Gate-stack Process for Ge MOS Devices with La2O3 Gate Dielectric |
| Thesis of Earned Doctorate in 2007 | |
| Joel Molina Reyes | A Study on the Reliability of Metal Gate-La203Thin Tilm Stacked Structures |
| Thesis of Earned Doctorate in 2006 | |
| NG Jin Aun | A Study on Mobility of MOSFETs with La2O3 Gate Dielectric |
| Hisayo Momose | Study on si transistors with high performance and high reliability for CMOS/BiCMOS integrated circuits |
| Thesis of Earned Doctorate in 2005 | |
| Yongshik Kim | Analysis of Electrical Conduction in Rare Earth Gate Dielectrics |
| Thesis of Earned Doctorate in 2004 | |
| Jun-ichi Tonotani | Study on Dry Etching for Profile and Selectivity Control in ULSI(Ultra-Large Scale Integrated Circuits) Manufacturing |
| Kyosuke Ohshima | Application of High Dielectric Constant Thin Film for Advanced CMOS Devices |
| Thesis of Earned Doctorate in 2003 | |
| Shuji Ikeda | Tecnology for High-density and High-performance Static Random Access Memory |
| Thesis of Earned Doctorate in 2001 | |
| Hitoshi Aoki | A study on Accurate and Efficient Compact Models for New Components Used for Integrated Circuits |
| Masakatu Tsuchiaki | A study of Si/SiO2 Interfacial Properties for ULSI Fabrication |
| Master Thesis in 2010 | |
| Hideaki Arai | A Study on Ni Silicide contact for Si Nanowire FET |
| Hiroto Nakayama | Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOSFETs |
| Kiyohisa Funamizu | Electrical Characteristics of In0.53Ga0.47As MOS Device with High-k Gate Dielectrics |
| Wataru Hosoda | Fabrication of SB-MOSFETs on SOI Substrates Using Ni Silicide with Er Interlayer |
| Katsuya Matano | Silicates formation in Gate Dielectric of Rare Earth (La, Ce, Pr and Tm) oxides |
| Master Thesis in October 2009 | |
| Lee Yeonghun | Theoretical Study on Ballistic Transport Characteristics of Silicon Nanowire FETs |
| Master Thesis in 2008 | |
| Manabu Adachi | A Novel Flat Band Voltage Tuning for Metal/High-k Gate Stack Structure |
| Yoshihisa Oishi | A Study on Effective Barrier Height Control with Metal Inserted Ni Silicide |
| Takamasa Kawanago | A Study on High-k Gage Stack Engineering for Improving Mobility |
| Yasuhiro Morozumi | A study of quasi ballistic conduction in advanced MOSFET using RT model |
| Soshi Sato | |
| Master Thesis in 2007 | |
| Yasuhiro Shiino | Novel Rare Earth Oxides Gate Stack for Advanced La2O3-MOSFET |
| Takashi Shiozawa | Improvement of Thermal Stability of Ni Silicide on Heavily Doped N+-Si |
| Jaeyeol Song | A Study on Process Optimization of Ge-MOS Devices with La2O3 Gate dielectric |
| Kiichi Tachi | A Study on Process Optimization for High Performance La2O3-MOS devices |
| Masayuki Nakagawa | Study on RF Characteristics and Modeling of Scaled MOSFET |
| Koji Nagahiro | Thermal Stability of NiSi Improved by Post Silicidation Metal Doping Method. |
| Master Thesis in 2006 | |
| Issui Aiba | Study of Resist Related Problems and Solid Phase Epitaxial Growth on Plasma Doping Method |
| Yusuke Kuroki | Novel Gate Stack and Process Optimization for La2O3-MOSFET(La2O3-/a> |
| Kentaro Nakagawa | Study on Y2O3 Buffer Layer for High-temperature Processed La2O3 MOSFET |
| Akira Fukuyama | Electrical Characteristics of La2O3 MIM Capacitor with Different Process Condition |
| Satoshi Yoshizaki | Study on Characterization and Modeling of RF MOSFET |
| Ruifei Xiang | Formation of Heat Resistant Ni Silicide Using Metal Additive for Nanoscale CMOS |
| Master Thesis in 2005 | |
| Yoichi Kobayashi | Formation of heat resistant Ni silicide by additional Hf layers |
| Takahisa Sato | Effects of surface treatments on the retained dose of impurities for plasma doping |
| Henderianshah Sauddin | Low-Frequency (1/f ) Noise of nMISFET with La2O3 High-k Gate Dielectrics and Analysis of Ultra-Shallow p+/n Junction Formed by Plasma Doping Method |
| Kunihiro Miyauchi | Study on La2O3/Y2O3Stacked Gate Dielectrics |
| Joji Yoshida | The Process Dependence of Low-Frequency Noise in MOSFETS with La2O3 Gate Dieletrics |
| Master Thesis in 2004 | |
| Isao Ueda | A study on High-k Stacked GAte Dielectric Thin films of Rare Earth Oxides |
| Atsushi Kuriyama | Effect of Post Metallization Annealing for La2O3 Thin Film |
| Master Thesis in 2003 | |
| Sadahiro Akama | A study on Stability of High-k Gate Thin Films in Moisture Ambience and Ultra-shallow Junction Technology by Plasma Doping Method |
| Chizuru Ohshima | A study on the effect of surface treatment of Si substrate on the rare earth gate dielectrics |
| Ikumi Kashiwagi | A study on dependence of amorphous or crystalline rare earth gate oxides on Si surface orientation |
| Akira Kikuchi | Study on Fabrication Process for High-k Gate MOSFET Using Rare Earth Oxides |
| Junichi Taguchi | A study on the effect of the low temperature long time anneal for Dy2O3 and fabrication process of TaN gate electrode |
| Hiroyuki Yamamoto | A Study on the Ultra-High Vacuum Anneal Method for the Rare Earth Gate Dielectrics |
| Master Thesis in 2002 | |
| Koh-ichiro Satoh | Study on Pr2O3 Dielectric Thin Films for MOSFET Gate Insulator
Application |
| Mitsuhiro Takeda | Study on Lu2O3 Thin Films for High-k Gate Insulator Application |
| Master Thesis in 2001 | |
| Ryosuke Fujimura | Analysis on high-k dielectric gate insulator MISFETs by two-dimensional device |
| Bachelor Thesis in 2009 | |
| Tomotsune Koyanagi | Electrical Characterization of La2O3-Gated
MOSFET with Mg Incorporation |
| Bachelor Thesis in 2007 | |
| Koichi Okamoto | Electrical characteristics of La2O3 and HfO2 for gate oxide application |
