List of Prof.Iwai's Thesis
	List of Thesis Title(1976-2010)(PDF)
	Representative Thesis

- List of Doctoral/Master/Graduation Thesis

Thesis of Earned Doctorate in 2011
Hiroshi Shimomura	A Study of High-Frequency Performance in MOSFETs Scaling
Kiichi Tachi	A Study on Carrier Transport Properties of Vertically-Stacked Nanowire Transistors
Takamasa Kawanago	A Study on High-k / Metal Gate Stack MOSFETs with Rare Earth Oxides
Soshi Satoh	A Study on Electrical Characteristics of Silicon Nanowire Field Effect Transistors

Thesis of Earned Doctorate in 2010
Jaeyeol Song	A Study on Gate-stack Process for Ge MOS Devices with La2O3 Gate Dielectric

Thesis of Earned Doctorate in 2007
Joel Molina Reyes	A Study on the Reliability of Metal Gate-La203Thin Tilm Stacked Structures

Thesis of Earned Doctorate in 2006
NG Jin Aun	A Study on Mobility of MOSFETs with La2O3 Gate Dielectric
Hisayo Momose	Study on si transistors with high performance and high reliability for CMOS/BiCMOS integrated circuits

Thesis of Earned Doctorate in 2005
Yongshik Kim	Analysis of Electrical Conduction in Rare Earth Gate Dielectrics

Thesis of Earned Doctorate in 2004
Jun-ichi Tonotani	Study on Dry Etching for Profile and Selectivity Control in ULSI(Ultra-Large Scale Integrated Circuits) Manufacturing
Kyosuke Ohshima	Application of High Dielectric Constant Thin Film for Advanced CMOS Devices

Thesis of Earned Doctorate in 2003
Shuji Ikeda	Tecnology for High-density and High-performance Static Random Access Memory

Thesis of Earned Doctorate in 2001
Hitoshi Aoki	A study on Accurate and Efficient Compact Models for New Components Used for Integrated Circuits
Masakatu Tsuchiaki	A study of Si/SiO2 Interfacial Properties for ULSI Fabrication

Master Thesis in March 2011
Tomotsune Koyanagi	Effect of Alkali-earth-elements Incorporation on La2O3 Dielectrics for Scaled Silicon MOS Device
Kenji Ozawa	Atomic layer deposition of advanced gate oxides for scaled MOSFET
Takashi Kanda	Interface Properties of In0.53Ga0.47As MOS Capacitors with La2O3 and HfO2 Gate Dielectrics
Naoto Shigemori	Ni Silicide formation into Si Nanowire using nitrogen incorporation method
Koki Mukai	A study on resistive-switching behavior of CeO2 metal-insulator-metal structures for resistance random access memory devices
Wu Yang	Ni Silicide Schottky barrier tunnel FET for Low power device applications
Dou Chunmeng	A study on resistive switching behaviors in rare earth oxide based MIM structure for memory application

Master Thesis in September 2010
Zade Darius	III-V MOSFETs: A Study on High-k Gate Dielectrics
Mokhammad Sholihul Hadi	A Study on Electrical and Magnetic Characterization of Co87Zr5Nb8 Films for High-Q On-chip Inductors

Master Thesis in 2010
Hideaki Arai	A Study on Ni Silicide contact for Si Nanowire FET
Hiroto Nakayama	Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOSFETs
Kiyohisa Funamizu	Electrical Characteristics of In0.53Ga0.47As MOS Device with High-k Gate Dielectrics
Wataru Hosoda	Fabrication of SB-MOSFETs on SOI Substrates Using Ni Silicide with Er Interlayer
Katsuya Matano	Silicates formation in Gate Dielectric of Rare Earth (La, Ce, Pr and Tm) oxides

Master Thesis in September 2009
Lee Yeonghun	Theoretical Study on Ballistic Transport Characteristics of Silicon Nanowire FETs

Master Thesis in 2009
Koichi Okamoto	Performance Improvement of Sub-1nm EOT MOSFET - Selection of Metal/high-k Materials for Effective Oxygen Control -
Hideyuki Kamimura	Nickel silicide contact for Silicon Nanowire FET
Miyuki Kouda	A Guideline for Material Design of Gate Oxide in Further Scaled MOSFET -Improvement of electrical properties by CeO2/La2O3 stack structure-
Kohei Noguchi	A Study of Schottky Barrier Height Modulation by Metal Insertion and Its Application to SB-MOSFETs
Masafumi Hino	New Stress Inducing Technique for UTBSOI
Hiroki Fujisawa	Electrical Characterization of W/HfO2 MOSFET with La2O3 Incorporation

Master Thesis in 2008
Manabu Adachi	A Novel Flat Band Voltage Tuning for Metal/High-k Gate Stack Structure
Yoshihisa Oishi	A Study on Effective Barrier Height Control with Metal Inserted Ni Silicide
Takamasa Kawanago	A Study on High-k Gage Stack Engineering for Improving Mobility
Yasuhiro Morozumi	A study of quasi ballistic conduction in advanced MOSFET using RT model
Soshi Sato

Master Thesis in 2007
Yasuhiro Shiino	Novel Rare Earth Oxides Gate Stack for Advanced La2O3-MOSFET
Takashi Shiozawa	Improvement of Thermal Stability of Ni Silicide on Heavily Doped N+-Si
Jaeyeol Song	A Study on Process Optimization of Ge-MOS Devices with La2O3 Gate dielectric
Kiichi Tachi	A Study on Process Optimization for High Performance La2O3-MOS devices
Masayuki Nakagawa	Study on RF Characteristics and Modeling of Scaled MOSFET
Koji Nagahiro	Thermal Stability of NiSi Improved by Post Silicidation Metal Doping Method.

Master Thesis in 2006
Issui Aiba	Study of Resist Related Problems and Solid Phase Epitaxial Growth on Plasma Doping Method
Yusuke Kuroki	Novel Gate Stack and Process Optimization for La2O3-MOSFET(La2O3-/a>
Kentaro Nakagawa	Study on Y2O3 Buffer Layer for High-temperature Processed La2O3 MOSFET
Akira Fukuyama	Electrical Characteristics of La2O3 MIM Capacitor with Different Process Condition
Satoshi Yoshizaki	Study on Characterization and Modeling of RF MOSFET
Ruifei Xiang	Formation of Heat Resistant Ni Silicide Using Metal Additive for Nanoscale CMOS

Master Thesis in 2005
Yoichi Kobayashi	Formation of heat resistant Ni silicide by additional Hf layers
Takahisa Sato	Effects of surface treatments on the retained dose of impurities for plasma doping
Henderianshah Sauddin	Low-Frequency (1/f ) Noise of nMISFET with La2O3 High-k Gate Dielectrics and Analysis of Ultra-Shallow p+/n Junction Formed by Plasma Doping Method
Kunihiro Miyauchi	Study on La2O3/Y2O3Stacked Gate Dielectrics
Joji Yoshida	The Process Dependence of Low-Frequency Noise in MOSFETS with La2O3 Gate Dieletrics

Master Thesis in 2004
Isao Ueda	A study on High-k Stacked GAte Dielectric Thin films of Rare Earth Oxides
Atsushi Kuriyama	Effect of Post Metallization Annealing for La2O3 Thin Film

Master Thesis in 2003
Sadahiro Akama	A study on Stability of High-k Gate Thin Films in Moisture Ambience and Ultra-shallow Junction Technology by Plasma Doping Method
Chizuru Ohshima	A study on the effect of surface treatment of Si substrate on the rare earth gate dielectrics
Ikumi Kashiwagi	A study on dependence of amorphous or crystalline rare earth gate oxides on Si surface orientation
Akira Kikuchi	Study on Fabrication Process for High-k Gate MOSFET Using Rare Earth Oxides
Junichi Taguchi	A study on the effect of the low temperature long time anneal for Dy2O3 and fabrication process of TaN gate electrode
Hiroyuki Yamamoto	A Study on the Ultra-High Vacuum Anneal Method for the Rare Earth Gate Dielectrics

Master Thesis in 2002
Koh-ichiro Satoh	Study on Pr2O3 Dielectric Thin Films for MOSFET Gate Insulator Application
Mitsuhiro Takeda	Study on Lu2O3 Thin Films for High-k Gate Insulator Application

Master Thesis in 2001
Ryosuke Fujimura	Analysis on high-k dielectric gate insulator MISFETs by two-dimensional device

Bachelor Thesis in 2011
Tohru Kubota	Estimation of Interface and Oxide Defects in Direct Contact High-k/Si Structure by Conductance Method

Bachelor Thesis in 2009
Tomotsune Koyanagi	Electrical Characterization of La2O3-Gated MOSFET with Mg Incorporation

Bachelor Thesis in 2007
Koichi Okamoto	Electrical characteristics of La2O3 and HfO2 for gate oxide application