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Iwai Laboratory
Frontier Research Center,
Tokyo Institute of Technology
TEL:+81-45-924-5471
FAX:+81-45-924-5584
Last Update:5th March,2008
It succeeded in producing and operating the transistor used La<SUB>2</SUB>O<SUB>3 for the gate insulation films.
Using La<SUB>2</SUB>O<SUB>3, the world's smallest leak current for EOT was realized.