Iwai Lab


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東京工業大学
フロンティア研究センター
岩井研究室
TEL:045-924-5471
FAX:045-924-5584


最終更新日:2011.4.21

論文一覧

岩井教授の論文
 
岩井教授 論文一覧
論文題目一覧(1976-2010) (PDF)
主な論文


博士論文

2011年取得 博士論文一覧
下村 浩 A Study of High-Frequency Performance in MOSFETs Scaling
舘 喜一 A Study on Carrier Transport Properties of Vertically-Stacked Nanowire Transistors
川那子 高暢 A Study on High-k / Metal Gate Stack MOSFETs with Rare Earth Oxides
佐藤 創志 A Study on Electrical Characteristics of Silicon Nanowire Field Effect Transistors


2010年取得 博士論文一覧
宋 在烈 A Study on Gate-stack Process for Ge MOS Devices with La2O3Gate Dielectric


2007年取得 博士論文一覧
Joel Molina Reyes A Study on the Reliability of Metal Gate–La2O3 Thin Film Stacked Structures


2006年取得 博士論文一覧
黄仁安 A Study on Mobility of MOSFETs with La2O3 Gate Dielectric
百瀬寿代 Study on si transistors with high performance and high reliability for CMOS/BiCMOS integrated circuits


2005年取得 博士論文一覧
金容湜 Analysis of Electrical Conduction in Rare Earth Gate Dielectrics


2004年取得 博士論文一覧
戸野谷純一 Study on Dry Etching for Profile and Selectivity Control in ULSI(Ultra-Large Scale Integrated Circuits) Manufacturing
大島享介 Application of High Dielectric Constant Thin Film for Advanced CMOS Devices


2003年取得 博士論文一覧
池田修二 Tecnology for High-density and High-performance Static Random Access Memory


2001年取得 博士論文一覧
青木均 A study on Accurate and Efficient Compact Models for New Components Used for Integrated Circuits
土明正勝 A study of Si/SiO2 Interfacial Properties for ULSI Fabrication


修士論文

2011年3月卒業 修士論文一覧
小柳 友常 Effect of Alkali-earth-elements Incorporation on La2O3 Dielectrics for Scaled Silicon MOS Device
小澤 健児 Atomic layer deposition of advanced gate oxides for scaled MOSFET
神田 高志 Interface Properties of In0.53Ga0.47As MOS Capacitors with La2O3 and HfO2 Gate Dielectrics
茂森 直登 Ni Silicide formation into Si Nanowire using nitrogen incorporation method
向井 弘樹 A study on resistive-switching behavior of CeO2 metal-insulator-metal structures for resistance random access memory devices
呉 研 Ni Silicide Schottky barrier tunnel FET for Low power device applications
Dou Chunmeng A study on resistive switching behaviors in rare earth oxide based MIM structure for memory application


2010年9月卒業 修士論文一覧
Zade Darius III-V MOSFETs: A Study on High-k Gate Dielectrics
Mokhammad Sholihul Hadi A Study on Electrical and Magnetic Characterization of Co87Zr5Nb8 Films for High-Q On-chip Inductors


2010年卒業 修士論文一覧
新井 英朗 A Study on Ni Silicide contact for Si Nanowire FET
中山 寛人 Crystallographic Orientation Dependent Electrical Characteristics of La2O3 MOSFETs
船水 清永 Electrical Characteristics of In0.53Ga0.47As MOS Device with High-k Gate Dielectrics
細田 亘 Fabrication of SB-MOSFETs on SOI Substrates Using Ni Silicide with Er Interlayer
又野克哉 Silicates formation in Gate Dielectric of Rare Earth (La, Ce, Pr and Tm) oxides


2009年9月卒業 修士論文一覧
李 映勲 Theoretical Study on Ballistic Transport Characteristics of Silicon Nanowire FETs


2009年卒業 修士論文一覧
岡本晃一 Performance Improvement of Sub-1nm EOT MOSFET - Selection of Metal/high-k Materials for Effective Oxygen Control -
上村英之 Nickel silicide contact for Silicon Nanowire FET
幸田みゆき A Guideline for Material Design of Gate Oxide in Further Scaled MOSFET -Improvement of electrical properties by CeO2/La2O3 stack structure-
野口浩平 A Study of Schottky Barrier Height Modulation by Metal Insertion and Its Application to SB-MOSFETs
日野雅文 New Stress Inducing Technique for UTBSOI
藤澤宏樹 Electrical Characterization of W/HfO2 MOSFET with La2O3 Incorporation


2008年卒業 修士論文一覧
足立 学 A Novel Flat Band Voltage Tuning for Metal/High-k Gate Stack Structure
大石善久 A Study on Effective Barrier Height Control with Metal Inserted Ni Silicide
川那子高暢 A Study on High-k Gage Stack Engineering for Improving Mobility
佐藤創志
両角康宏 A study of quasi ballistic conduction in advanced MOSFET using RT model


2007年卒業 修士論文一覧
椎野泰洋 Novel Rare Earth Oxides Gate Stack for Advanced La2O3-MOSFET
塩澤崇史 Improvement of Thermal Stability of Ni Silicide on Heavily Doped N+-Si
宋 在烈 A Study on Process Optimization of Ge-MOS Devices with La2O3 Gate dielectric
舘喜一 A Study on Process Optimization for High Performance La2O3-MOS devices
中川昌幸 Study on RF Characteristics and Modeling of Scaled MOSFET
永廣候治 Thermal Stability of NiSi Improved by Post Silicidation Metal Doping Method.


2006年卒業 修士論文一覧
相庭一穂 Study of Resist Related Problems and Solid Phase Epitaxial Growth on Plasma Doping Method (プラズマドーピングのレジストに関する問題と固相成長に関する研究)
黒木裕介 Novel Gate Stack and Process Optimization for La2O3-MOSFET(La2O3-MOSFETの新ゲートスタック構造とプロセス最適化に関する研究)
中川健太郎 Study on Y2O3 Buffer Layer for High-temperature Processed La2O3 MOSFET (La2O3 MOSFETの高温作製プロセスにおけるY2O3バッファ層の効果に関する研究)
福山享 Electrical Characteristics of La2O3 MIM Capacitor with Different Process Condition (異なるプロセス条件におけるLa2O3MIMキャパシタの最適化と電気特性の検討)
吉崎智史 Study on Characterization and Modeling of RF MOSFET(RF MOSFETの特性評価およびモデリングに関する研究)
項瑞飛 Formation of Heat Resistant Ni Silicide Using Metal Additive for Nanoscale CMOS (異種材料を添加した高耐熱Niシリサイドの形成)


2005年卒業 修士論文一覧
小林洋一 Formation of heat resistant Ni silicide by additional Hf layers
佐藤貴久 Effects of surface treatments on the retained dose of impurities for plasma doping
ヘンドリアンシャー・サウッディン Low-Frequency (1/f ) Noise of nMISFET with La2O3 High-k Gate Dielectrics and Analysis of Ultra-Shallow p+/n Junction Formed by Plasma Doping Method
宮内邦裕 Study on La2O3/Y2O3Stacked Gate Dielectrics
吉田丈治 The Process Dependence of Low-Frequency Noise in MOSFETS with La2O3 Gate Dieletrics


2004年卒業 修士論文一覧
上田功 A study on High-k Stacked GAte Dielectric Thin films of Rare Earth Oxides
栗山篤 Effect of Post Metallization Annealing for La2O3 Thin Film


2003年卒業 修士論文一覧
赤間貞洋 A study on Stability of High-k Gate Thin Films in Moisture Ambience and Ultra-shallow Junction Technology by Plasma Doping Method
大島千鶴 A study on the effect of surface treatment of Si substrate on the rare earth gate dielectrics
希土類ゲート絶縁膜におけるSi基板表面処理の効果
柏木郁未 A study on dependence of amorphous or crystalline rare earth gate oxides on Si surface orientation
(アモルファス及び結晶化した希土類ゲート酸化膜のSi 基板面方位依存性に関する研究)
菊地明 Study on Fabrication Process for High-k Gate MOSFET Using Rare Earth Oxides
田口順一 A study on the effect of the low temperature long time anneal for Dy2O3 and fabrication process of TaN gate electrode
山本浩之 A Study on the Ultra-High Vacuum Anneal Method for the Rare Earth Gate Dielectrics


2002年卒業 修士論文一覧
佐藤航一郎 Study on Pr2O3 Dielectric Thin Films for MOSFET Gate Insulator Application
武田光弘 Study on Lu2O3 Thin Films for High-k Gate Insulator Application


2001年卒業 修士論文一覧
藤森亮介 Analysis on high-k dielectric gate insulator MISFETs by two-dimensional device simulation

卒業論文

2011年卒業 卒業論文一覧
久保田 透 Estimation of Interface and Oxide Defects in Direct Contact High-k/Si Structure by Conductance Method

2009年卒業 卒業論文一覧
小柳 友常 Electrical Characterization of La2O3-Gated MOSFET with Mg Incorporation

2007年卒業 卒業論文一覧
岡本晃一 Electrical characteristics of La2O3 and HfO2 for gate oxide application