東京工業大学　大学院総合理工学研究科　複合創造領域シンポジウム

発表資料一覧
舘　喜一	Vertically-Stacked Nanowire Transistors for future CMOS
佐藤　創始	Influence of the cross-sectional shape for Si nanowire FETs
川那子　高暢	An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric
Maimaitirexiati Maimaiti	Remote Coulomb and roughness scatterings in gate oxide scaling
Abudureheman Abudukelimu	The Effect of Scattering in Drain Region of Ballistic Channel Diode
幸田　みゆき	Electrical characterization of CVD deposited Ce oxides
李　映勲	Diameter-dependent injection velocity of ballistic Si nanowire MOSFETs
Darius Zade	Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As
茂森　直登	Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation
小澤　健児	Self-limited growth of La oxides with ALD
小柳　友常	Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation
Dou Chunmeng	Feasibility study of Ce oxide for resistive RAM application
呉　研	Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface
小山　将央	Lateral enchroachment of Ni silicide into Si nanowire
中島　一裕	Interface state density of 3-D structured Si using charge pumping method
金田　翼	Effect of rare earth oxide capping for La-based gate oxides
来山　大祐	Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling
久保田　透	Spectroscopic analysis of interface state density in high-k/Si structure