G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
発表資料一覧
岩井 洋
Miniaturization and future prospects of Si devices
Milan Kumar Bera
Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET
Song Jaeyeol
Effect of Ultrathin Si Passivation Layer for La
2
O
3
/Ge MOS structure
Takamasa Kawanago
Experimental Investigation of V
FB
shift and Effective Mobility in La
2
O
3
MOS Devices
Soshi Sato
Evaluation of Channel Potential Profile of Si Nanowire Field Effect Transistor
Maimaitirexiati Maimaiti
Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO
2
/ La
2
O
3
Gate Stacks
Abudukelimu Abudureheman
Current-Voltage Characteristics of Ballistic Nanowire MOSFET by Numerical Analysis
Miyuki Kouda
Charged defects reduction in gate insulator with multivalent materials
Lee Yeonghun
Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs
Hideaki Arai
Annealing Reaction for Ni Silicidation of Si Nanowire
Kiyohisa Funamizu
Electrical Characteristics of HfO
2
and La
2
O
3
Gate Dielectrics for In
0.53
Ga
0.47
As MOS Structure
Wataru Hosoda
A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs
Katsuya Matano
Threshold Voltage Control in p-MOSFET with High-k Gate dielectric
Hiroto Nakayama
Crystallographic Orientation Dependent Electrical Characteristics of La
2
O
3
MOS Capacitors
Tomotsune Koyanagi
Influence of Alkali Earth Elements Capping on Electrical Characteristics of La
2
O
3
Gated MOS Device