216th ECS Meeting
発表資料一覧
岩井 洋
A roadmap for nano-CMOS
角嶋 邦之
Overwhelming the 0.5 nm EOT Level for CMOS Gate Dielectric
Milan Kumar Bera
Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge
Maimaitirexiati Maimaiti
Remote Coulomb Scattering Limited Mobility in MOSFET with CeO
2
/ La
2
O
3
Gate Stacks
新井 英朗
Annealing Reaction for Ni Silicidation of Si Nanowire
船水 清永
Electrical Characteristics of HfO
2
and La
2
O
3
Gate Dielectrics for In
0.53
Ga
0.47
As MOS Structure
中山 寛人
Electrical Characteristics of La
2
O
3
gated MOS Capacitors with Different Wafer Orientation
小柳 友常
Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La
2
O
3
Gated MOS Device