PRIME 2008, 214th Meeting of ECS
発表資料一覧
角嶋 邦之
Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy
宋 在烈
Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La
2
O
3
Gate Dielectric
岡本 晃一
0.5 nm EOT MOS structure with TaSi
x
/W stacked gate electrode
幸田 みゆき
Electric properties of CeO
X
/La
2
O
3
stack as gate dielectric in advanced MOSFET technology
野口 浩平
Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs
日野 雅文
Study on Stress Memorization by Argon Implantation and Annealing
李 映勲
Electronic Structure Analysis of Silicon Nanowires for High Conductivity in n- and p-channel Nanowire-FET