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			- Research Contents
	TOP Introduction Research Contents Research News Research Achievements Prof. Iwai's Brief History Paper List the Latest Announcement Society activity Awards for Applicants Visitor to Iwai Lab Staff Introduction Album Link Access Iwai Laboratory Frontier Collaborative Research Center, Tokyo Institute of Technology		Research for the limit of the most advanced CMOS technology Research for a insulation film of high induced current gate(High-k) Search for CMOS super-subdivided limit Research for a super-shallow S/D junction using plasma-doping Development of model for high frequency CMOS circuits (the Most Advanced CMOS) gate length: 30nm gate insulation film: 0.8nm diffusion layer: 20nm [High-k materials] ZrO<SUB>2, HfO<SUB>2, La<SUB>2</SUB>O<SUB>3, CeO<SUB>2 Na<SUB>2</SUB>O<SUB>3, Sm<SUB>2</SUB>O<SUB>3, Eu<SUB>2</SUB>O<SUB>3, Gd<SUB>2</SUB>O<SUB>3 Tb<SUB>2</SUB>O<SUB>3, Dy<SUB>2</SUB>O<SUB>3, Ho<SUB>2</SUB>O<SUB>3, Er<SUB>2</SUB>O<SUB>3 Tm<SUB>2</SUB>O<SUB>3, Yb<SUB>2</SUB>O<SUB>3, Lu<SUB>2</SUB>O<SUB>3 > Research plan Close cooperation with the industrial world > Domestic technical tie-up STARC, Toshiba, Nichiden, Hitachi, Sanyo, Matsushita, Denso > International joint research LEIT and LPCS in Flance, and NCSU in U.S.A. > Experiment equipment [ISE&SILVACO] This is the workstation equipping TCAD6.1 of ISE, the comprehensive device simulator which is available of process simulation to device simulation.Also, the workstation equips SmartSpice and Utmost3 of SILVACO. It can analize circuits and extract the parameter of a simulation model. [MBE] MRE is possible to deposit pure thin films among a super-high vaccum(-10-10Torr).The device equips four E-guns, and can deposit two kinds of thin films simultaneously. Now, it is used in order to deposit an oxide. [Measurement equipment] It is the measurement system which measure almost all electrical properties:the main equipments are PUROBA, 4156A, 4284A, etc). The nickname is "doghouse".