2011 Dielectric Thin Films For Future Electron Devices: Science And Technology, January
発表資料一覧
幸田 みゆき
Rare earth oxide capping effect on La
2
O
3
gate dielectrics toward EOT of 0.5nm
幸田 みゆき
Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of CVD and ALD Processes
李 映勲
Cross‐sectional distribution of phonon‐limited electron mobility in rectangular silicon nanowire field effect transistors
Dariush Hassan Zadeh
Effects of In
0.53
Ga
0.47
As Surface Preparation on Electrical Characteristics of MOS Devices
来山 大祐
Influences of W electrodes thickness on electrical properties of high temperature annealed La
2
O
3
MOS devices for EOT of 0.5 nm