The 20th International Workshop on Junction Technology (IWJT2021) will be held on June 10 - 11, 2021 through on-line . Since started in 2000, IWJT has been held annually in Japan or China. IWJT is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors.
In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists.
The 20th IWJT 2021 will be held on-line on June 10 - 11 by live broadcast followed by an on-demand access. Note that the poster session will not be held this time.
Scope of Workshop
(Papers are solicited in, but not limited to the following)
- Doping Technology
--- Ion implantation, plasma doping, gas and solid doping
- Annealing Technology
--- Rapid thermal process, laser annealing, flash annealing, SPE,
new activation annealing, lattice damage and defects
- Junction Technology for Devices
--- CMOS devices, Power devices, Image sensors, Solar cells, etc.
- Silicide and Contact Technology
--- Silicide materials and salicide technology, embedded and elevated S/D,
low barrier contact, surface pre-treatment
- Characterization for Shallow Junction
--- Physical and electrical characterization of junctions for 2D and 3D structures
- Modeling and Simulation
--- Modeling and simulation of shallow junction formation of CMOS
- Advanced Equipment, Materials and Substrates for Junction Technologies
Deadline for the submission
The deadline for camera-ready manuscript (2-4 pages) submission is
May 6th (Extended), 2021. (closed)
J-EDS Special Issue
After strict reviewing the submission, 10-20 papers will be selected to be published as a special issue in Journal of the Electron Devices Society (J-EDS).
It is a great chance to publish your recent achievements as a peer review paper.