IWJT2011 JUNE 9 - 10, 2011 Kyoto, Japan

11^th International Workshop on Junction Technology 2011
Kyoto University (Uji Campus), Kyoto, Japan

The 11^th International Workshop on Junction Technology (IWJT2011) will be held on June 9 - 10, 2011 in Kyoto, Japan. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interests of the community on a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists.

Scope of Workshop
(Papers are solicited in, but not limited to the following)

• Doping Technology --- Ion implantation, plasma doping, gas and solid doping
• Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects
• Junction Technology for Novel CMOS Devices --- Junction for SOI, strained Si, SiGe, Ge, and Schottky barrier S/D MOSFET and small variability in advanced devices
• Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, embedded and elevated S/D, low barrier contact, surface pre-treatment
• Characterization for Shallow Junction --- Physical and electrical characterization of junctions for 2D and 3D structures
• Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS
• Advanced Equipment, Materials and Substrates for Junction Technologies

Deadline for submission

• Late news : April 25^th, 2011 (Closed)

Sponsored by
The Japan Society of Applied Physics

Technical Co-Sponsored by
IEEE EDS

Co-Sponsored by
SEMI-Japan
The Chinese Institute of Electronics
IEEE EDS Japan Chapter
IEEE EDS Kansai Chapter